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Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module construction. Here, we examine UV‐induced degradation (UVID) in various commercial, unencapsulated crystalline silicon cell technologies, including bifacial silicon heterojunction (HJ), interdigitated back contact (IBC), passivated emitter and rear contact (PERC), and passivated emitter rear totally diffused (PERT) solar cells. We performed UV exposure tests using UVA‐340 fluorescent lamps at 1.24 W·m⁻²(at 340 nm) and 45°C through 4.02 MJ·m⁻²(2000 h). Our results showed that modern cell architectures are more vulnerable to UVID, leading to a significant power decrease (−3.6% on average; −11.8% maximum) compared with the conventional aluminum back surface field (Al‐BSF) cells (<−1% on average). The power degradation is largely caused by the decrease in short‐circuit current and open‐circuit voltage. A greater power decrease is observed in bifacial cells with rear‐side exposure compared with those with front‐side exposure, indicating that the rear side is more susceptible to UV damage. Secondary ion mass spectroscopy (SIMS) confirmed an increase in hydrogen concentration near the Si/passivation interface in HJ and IBC cells after UV exposure; the excess of hydrogen could result in hydrogen‐induced degradation and subsequently cause higher recombination losses. Additionally, surface oxidation and hot‐carrier damage were identified in PERT cells. Using a spectral‐based analysis, we obtained an acceleration factor of 5× between unpackaged cells (containing a silicon nitride antireflective coating on the front) in the UV test and an encapsulated module (with the front glass and encapsulant blocking 90% of the UV at 294 nm and 353 nm, respectively) in outdoor conditions. From the analytical calculations, we show that a UV‐blocking encapsulant can reduce UV transmission in the module by an additional factor of ~50.

 

II–IV–V 2 materials, ternary analogs to III–V materials, are emerging for their potential applications in devices such as LEDs and solar cells. Controlling cation ordering in II–IV–V 2 materials offers the potential to tune properties at nearly fixed compositions and lattice parameters. While tuning properties at a fixed lattice constant through ordering has the potential to be a powerful tool used in device fabrication, cation ordering also creates challenges with characterization and quantification of ordering. In this work, we investigate two different methods to quantify cation ordering in ZnGeP 2 thin films: a stretching parameter calculated from lattice constants , and an order parameter determined from the cation site occupancies ( S ). We use high resolution X-ray diffraction (HRXRD) to determine and resonant energy X-ray diffraction (REXD) to extract S . REXD is critical to distinguish between elements with similar Z -number ( e.g. Zn and Ge). We found that samples with a corresponding to the ordered chalcopyrite structure had only partially ordered S values. The optical absorption onset for these films occurred at lower energy than expected for fully ordered ZnGeP 2 , indicating that S is a more accurate descriptor of cation order than the stretching parameter. Since disorder is complex and can occur on many length scales, metrics for quantifying disorder should be chosen that most accurately reflect the physical properties of interest. 

Adhesion measurements and chemical characterization of the encapsulant/silver metallization interface of a photovoltaic (PV) module through temperature, humidity, and voltage bias exposures were conducted. Results demonstrate two independent degradation mechanisms: (a) with voltage bias, the ionic conduction of Na⁺ions through the encapsulant results in the formation of sodium silicate at the silver metallization surface, thereby weakening that interface and (b) with moisture ingress, dissociation of the silane bonding to silver in the silver oxide similarly weakens this interface resulting in significantly lower debond energies.

 

The backsheet in photovoltaic modules belongs to an important class of layered materials where the tearing behavior of the individual layers does not necessarily represent the tearing behavior of the entire backsheet. Such characteristic arises from the interaction between the individual layers during the tearing process, where one layer of the backsheet is mechanically constrained by its neighboring layers and the layers may debond from each other. The mechanical constraint and debonding change the amount of energy dissipated during tearing and affect the overall tearing energy. In this work, we exposed a wide selection of backsheets with polymers including ethylene‐vinyl acetate (EVA), polyethylene terephthalate (PET), polyvinylidene fluoride (PVDF), and ethylene tetrafluoroethylene (ETFE) to damp heat (85°C/85%RH) for up to 2000 hours. We report on the effect of damp heat on the tearing energy as a function of damp heat exposure. We developed a model that describes the tearing energy of a layered structure by accounting for the tearing of the individual layers in the backsheet, the effect of mechanical constraint, and the adhesive debonding between the layers. Additionally, we explore the relationship between the microstructural change in the polymers which resulted from the damp heat exposure and the mechanical properties using modulated differential scanning calorimetry (MDSC), small and wide angle X‐ray scattering (SAXS and WAXS), and tensile testing.

 

Many technologically critical materials are metastable under ambient conditions, yet the understanding of how to rationally design and guide the synthesis of these materials is limited. This work presents an integrated approach that targets a metastable lead‐free piezoelectric polymorph of SrHfO₃. First‐principles calculations predict that the previous experimentally unrealized, metastable P4mmphase of SrHfO₃should exhibit a direct piezoelectric response (d₃₃) of 36.9 pC N⁻¹(compared tod₃₃= 0 for the ground state). Combining computationally optimized substrate selection and synthesis conditions lead to the epitaxial stabilization of the polar P4mmphase of SrHfO₃on SrTiO₃. The films are structurally consistent with the theory predictions. A ferroelectric‐induced large signal effective converse piezoelectric response of 5.2 pm V⁻¹for a 35 nm film is observed, indicating the ability to predict and target multifunctionality. This illustrates a coupled theory‐experimental approach to the discovery and realization of new multifunctional polymorphs.